SSF3051G7 30v p-channel mosfet www.goodark.com page 1 of 8 rev.1.0 main product characteristics features and benefits: description absolute max rating parameter symbol limit unit drain-source voltage v ds -30 v gate-source voltage v gs 25 v i d -4 a drain current-continuous@ current-pulsed (note 1) i dm -25 a maximum power dissipation p d 1.7 w operating junction and storage temperature range t j ,t stg -55 to 150 thermal resistance thermal resistance, junction-to-ambient (note 2) r ja 75 /w thermal resistance, junction-to-case(note 2) r jc 30 /w v dss -30v r ds (on) 45mohm(typ.) i d -4a sot23-6 marking and pin assignment schematic diagram ? advanced trench mosfet process technology ? special designed for buttery protection, load switching and general power management ? ultra low on-resistance with low gate charge ? fast switching and reverse body recovery ? 150 operating temperature ? lead free product it utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. these features combine to make this design an extremely efficient and reliable device for use in buttery protection, power switching application and a wide variety of other applications. d g s 3051g7 3051g7
SSF3051G7 30v p-channel mosfet www.goodark.com page 2 of 8 rev.1.0 electrical characteristics @t a =25 unless otherwise specified parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =-250a -30 v zero gate voltage drain current i dss v ds =-24v,v gs =0v -1 a gate-body leakage current i gss v gs =25v,v ds =0v 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =-250a -1 -1.6 -3 v v gs =-10v, i d =-4a 45 51 m drain-source on-state resistance r ds(on) v gs =-4.5v, i d =-3.4a 65 85 m forward transconductance g fs v ds =-5v,i d =-4a 8.5 s dynamic characteristics (note4) input capacitance c lss 520 pf output capacitance c oss 94 pf reverse transfer capacitance c rss v ds =-15v,v gs =0v, f=1.0mhz 73 pf switching characteristics (note 4) turn-on delay time t d(on) 8.9 ns turn-on rise time t r 4.0 ns turn-off delay time t d(off) 22.6 ns turn-off fall time t f v dd =-15v,i d =-1a v gs =-10v,r gen =6 5.5 ns total gate charge q g 7.1 nc gate-source charge q gs 0.86 nc gate-drain charge q gd v ds =-5v,i d =-4a, v gs =-5v 3.9 nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =-1.3a -0.8 -1.2 v diode forward current (note 2) i s -4 a reverse recovery time t rr 10.3 ns reverse recovery charge q rr tj=25 ,if=-4a, di/dt=-100a/us 4.3 nc
SSF3051G7 30v p-channel mosfet www.goodark.com page 3 of 8 rev.1.0 test circuits and waveforms switch waveforms: notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300s, duty cycle 2%. 4. guaranteed by design, not subject to production testing.
SSF3051G7 30v p-channel mosfet www.goodark.com page 4 of 8 rev.1.0 typical electrical and thermal characteristics figure 1: typical output characteristics figure 2: transfer characteristics figure 3: drain-source on-resistance figure 4 drain-source on-resistance figure 5 : source- drain diode forward figure 6: rdson vs vgs
SSF3051G7 30v p-channel mosfet www.goodark.com page 5 of 8 rev.1.0 figure 9 gate charge figure 10: capacitance vs vds t j -junction temperature( ) p d power(w) figure 7: power dissipation i d - drain current (a t j -junction temperature( ) figure 8 drain current figure 11: safe operation area figure 12: single pulse maximum power dissipation
SSF3051G7 30v p-channel mosfet www.goodark.com page 6 of 8 rev.1.0 figure 13: normalized maximum transient thermal impedance
SSF3051G7 30v p-channel mosfet www.goodark.com page 7 of 8 rev.1.0 mechanical data sot23-6 dimensions in millimeters (unit:mm) notes 1. all dimensions are in millimeters. 2. dimensions are inclusive of plating 3. package body sizes exclude mold flash and gate burrs. mold flash at the non-lead sides should be less than 6 mils. 4. dimension l is measured in gauge plane. 5. controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
SSF3051G7 30v p-channel mosfet www.goodark.com page 8 of 8 rev.1.0 ordering and marking information device marking: 3051g7 package (available) sot23-6 operating temperature range c : -55 to 150 oc devices per unit package type units/ tube tubes/ inner box units/ inner box inner boxes/ carton box units/ carton box sot23-6 3000pcs 10pcs 30000pcs 4pcs 120000pcs reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 or 150 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =125 or 150 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
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